{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685497","patent":{"patent_number":"US-9685497","title":"Embedded metal-insulator-metal capacitor","assignee":null,"inventors":[],"filing_date":"2016-09-15T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A second dielectric layer is disposed on the first metallization layer. A second conductive layer is disposed on the second dielectric layer and has a lateral dimension in a lateral direction larger than a lateral dimension of the first conductive layer in the lateral direction. A third dielectric layer is disposed on the second conductive layer. A first contact is disposed in the third dielectric layer and extends through the second conductive structure in a first peripheric region thereof that does not overlap the first conductive layer to contact the first conductive structure. A capacitor structure includes the first conductive layer, the second dielectric layer and the second conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Embedded metal-insulator-metal capacitor","description":"A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685497","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685497","citation_suggestion":"Patentable. \"Embedded metal-insulator-metal capacitor\" (US-9685497). https://patentable.app/patents/US-9685497","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685497","json":"https://patentable.app/api/llm-context/US-9685497","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:25:03.390Z"}