{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685504","patent":{"patent_number":"US-9685504","title":"Semiconductor to metal transition for semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-08-31T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor to metal transition for semiconductor devices","description":"A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semico","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685504","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685504","citation_suggestion":"Patentable. \"Semiconductor to metal transition for semiconductor devices\" (US-9685504). https://patentable.app/patents/US-9685504","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685504","json":"https://patentable.app/api/llm-context/US-9685504","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:24.491Z"}