{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685508","patent":{"patent_number":"US-9685508","title":"High voltage field effect transistors","assignee":null,"inventors":[],"filing_date":"2015-11-19T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Transistors suitable for high voltage and high frequency operation are disclosed. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first semiconductor material, a source region electrically coupled with a first end of the channel region, a drain region electrically coupled with a second end of the channel region, and an extrinsic drain region disposed between the channel region and drain region. The extrinsic drain region has a wider bandgap than that of the first semiconductor. A gate stack including a gate conductor and a gate insulator coaxially wraps completely around the channel region, drain and source contacts similarly coaxially wrap completely around the drain and source regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage field effect transistors","description":"Transistors suitable for high voltage and high frequency operation are disclosed. A nanowire is disposed vertically or horizontally on a substrate. A longitudinal length of the nanowire is defined int","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685508","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685508","citation_suggestion":"Patentable. \"High voltage field effect transistors\" (US-9685508). https://patentable.app/patents/US-9685508","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685508","json":"https://patentable.app/api/llm-context/US-9685508","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:11:37.140Z"}