{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685521","patent":{"patent_number":"US-9685521","title":"Lowering parasitic capacitance of replacement metal gate processes","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The present disclosure provides a method of forming a gate structure of a semiconductor device with reduced gate-contact parasitic capacitance. In a replacement gate scheme, a high-k gate dielectric layer is deposited on a bottom surface and sidewalls of a gate cavity. A metal cap layer and a sacrificial cap layer are deposited sequentially over the high-k gate dielectric layer to form a material stack. After ion implantation in vertical portions of the sacrificial cap layer, at least part of the vertical portions of the material stack is removed. The subsequent removal of a remaining portion of the sacrificial cap layer provides a gate component structure. The vertical portions of the gate component structure do not extend to a top of the gate cavity, thereby significantly reducing gate-contact parasitic capacitance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lowering parasitic capacitance of replacement metal gate processes","description":"The present disclosure provides a method of forming a gate structure of a semiconductor device with reduced gate-contact parasitic capacitance. In a replacement gate scheme, a high-k gate dielectric l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685521","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685521","citation_suggestion":"Patentable. \"Lowering parasitic capacitance of replacement metal gate processes\" (US-9685521). https://patentable.app/patents/US-9685521","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685521","json":"https://patentable.app/api/llm-context/US-9685521","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:41:26.398Z"}