{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685522","patent":{"patent_number":"US-9685522","title":"Forming uniform WF metal layers in gate areas of nano-sheet structures","assignee":null,"inventors":[],"filing_date":"2016-04-08T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Methods for forming uniform WF metal layers in gate areas of NS structures in a NS FET and the resulting devices are disclosed. Embodiments include providing NS structures, parallel to and spaced from each other, in a substrate; conformally forming gate dielectric and metal layers, respectively, on all surfaces in a gate area of each NS structure; forming a barrier layer on surfaces in the gate area of each NS structure except on surfaces in between the NS structures by PVD or PECVD; annealing the NS structures including the gate dielectric and metal layers; removing the barrier and metal layers from all surfaces; and forming a WF metal layer on all surfaces in the gate area of each NS structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming uniform WF metal layers in gate areas of nano-sheet structures","description":"Methods for forming uniform WF metal layers in gate areas of NS structures in a NS FET and the resulting devices are disclosed. Embodiments include providing NS structures, parallel to and spaced from","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685522","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685522","citation_suggestion":"Patentable. \"Forming uniform WF metal layers in gate areas of nano-sheet structures\" (US-9685522). https://patentable.app/patents/US-9685522","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685522","json":"https://patentable.app/api/llm-context/US-9685522","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:26.755Z"}