{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685538","patent":{"patent_number":"US-9685538","title":"Low temperature polysilicon thin film transistor and method for fabricating same","assignee":null,"inventors":[],"filing_date":"2014-12-30T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"The present invention provides a low temperature polysilicon thin film transistor and a fabricating method thereof. According to the method, a laser annealing process is performed to a remained portion of a a-Si layer on a substrate to form a first lightly doped drain (LDD) terminal, a second LDD terminal, a first phosphor material structure and a second phosphor material structure. A gate metal layer is then formed on the remained portion of the a-Si layer. A source metal layer and a drain metal layer are formed on the first doped layer and the second doped layer located at opposite sides of the gate metal layer, respectively. The present invention use the high temperature of the laser annealing process to perform a heat diffusion of phosphor material to form the LDD terminal and the phosphor material structure, the times of photomasks are used is reduced, and the process is simplified."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature polysilicon thin film transistor and method for fabricating same","description":"The present invention provides a low temperature polysilicon thin film transistor and a fabricating method thereof. According to the method, a laser annealing process is performed to a remained portio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685538","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685538","citation_suggestion":"Patentable. \"Low temperature polysilicon thin film transistor and method for fabricating same\" (US-9685538). https://patentable.app/patents/US-9685538","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685538","json":"https://patentable.app/api/llm-context/US-9685538","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:59:20.397Z"}