{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685552","patent":{"patent_number":"US-9685552","title":"Silicon carbide field effect transistor","assignee":null,"inventors":[],"filing_date":"2015-01-07T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A silicon carbide field effect transistor includes a silicon carbide substrate, an n-type drift layer, a p-type epitaxy layer, a source region, a trench gate, at least one p-type doped region, a source, a dielectric layer and a drain. The p-type doped region is disposed at the n-type drift layer to be adjacent to one lateral side of the trench gate, and includes a first doped block and a plurality of second doped blocks arranged at an interval from the first doped block towards the silicon carbide substrate. Further, a thickness of the second doped blocks does not exceed 2 um. Accordingly, not only the issue of limitations posed by the energy of ion implantation is solved, but also an electric field at a bottom and a corner of the trench gate is effectively reduced, thereby enhancing the reliability of the silicon carbide field effect transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide field effect transistor","description":"A silicon carbide field effect transistor includes a silicon carbide substrate, an n-type drift layer, a p-type epitaxy layer, a source region, a trench gate, at least one p-type doped region, a sourc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685552","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685552","citation_suggestion":"Patentable. \"Silicon carbide field effect transistor\" (US-9685552). https://patentable.app/patents/US-9685552","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685552","json":"https://patentable.app/api/llm-context/US-9685552","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:55:29.745Z"}