{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9685606","patent":{"patent_number":"US-9685606","title":"Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby","assignee":null,"inventors":[],"filing_date":"2015-12-15T00:00:00.000Z","publication_date":"2017-06-20T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A patterning method includes forming an etch-target layer on a substrate, forming mask patterns on the etch-target layer, and etching the etch-target layer using the mask patterns as an etch mask to form patterns spaced apart from each other. The etching process of the etch-target layer includes irradiating the etch-target layer with an ion beam, whose incident energy ranges from 600 eV to 10 keV. A recess region is formed in the etch-target layer between the mask patterns, and the ion beam is incident onto a bottom surface of the recess region at a first angle with respect to a top surface of the substrate and is incident onto an inner side surface of the recess region at a second angle with respect to the inner side surface of the recess region. The first angle ranges from 50° to 90° and the second angle ranges from 0° to 40°."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby","description":"A patterning method includes forming an etch-target layer on a substrate, forming mask patterns on the etch-target layer, and etching the etch-target layer using the mask patterns as an etch mask to f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9685606","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9685606","citation_suggestion":"Patentable. \"Patterning methods, methods of fabricating semiconductor devices using the same, and semiconductor devices fabricated thereby\" (US-9685606). https://patentable.app/patents/US-9685606","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9685606","json":"https://patentable.app/api/llm-context/US-9685606","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:54:13.079Z"}