{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9688580","patent":{"patent_number":"US-9688580","title":"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target","assignee":null,"inventors":[],"filing_date":"2015-04-15T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×1018 cm−3 or lower, and a carrier mobility of 10 cm2V−1 sec−1 or higher."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target","description":"Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputt","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9688580","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9688580","citation_suggestion":"Patentable. \"Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target\" (US-9688580). https://patentable.app/patents/US-9688580","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9688580","json":"https://patentable.app/api/llm-context/US-9688580","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:15.221Z"}