{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9688912","patent":{"patent_number":"US-9688912","title":"Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same","assignee":null,"inventors":[],"filing_date":"2012-07-27T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of etching a semiconductor substrate, having the steps of: providing a semiconductor substrate having a first layer containing Ti and a second layer containing at least one of Cu, SiO, SiN, SiOC and SiON; providing an etching liquid containing, in an aqueous medium, a basic compound composed of an organic amine compound and an oxidizing agent, the etching liquid having a pH from 7 to 14; and applying the etching liquid to the semiconductor substrate to selectively etch the first layer of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same","description":"A method of etching a semiconductor substrate, having the steps of: providing a semiconductor substrate having a first layer containing Ti and a second layer containing at least one of Cu, SiO, SiN, S","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9688912","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9688912","citation_suggestion":"Patentable. \"Etching method, and etching liquid to be used therein and method of producing a semiconductor substrate product using the same\" (US-9688912). https://patentable.app/patents/US-9688912","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9688912","json":"https://patentable.app/api/llm-context/US-9688912","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:30:24.195Z"}