{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691459","patent":{"patent_number":"US-9691459","title":"Semiconductor memory device including shorted variable resistor element of memory cell","assignee":null,"inventors":[],"filing_date":"2016-08-29T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device including shorted variable resistor element of memory cell","description":"A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691459","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691459","citation_suggestion":"Patentable. \"Semiconductor memory device including shorted variable resistor element of memory cell\" (US-9691459). https://patentable.app/patents/US-9691459","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691459","json":"https://patentable.app/api/llm-context/US-9691459","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:32:18.827Z"}