{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691462","patent":{"patent_number":"US-9691462","title":"Latch offset cancelation for magnetoresistive random access memory","assignee":null,"inventors":[],"filing_date":"2014-09-27T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":17,"abstract":"Systems and methods relate to operations on a magnetoresistive random access memory (MRAM) bit cell using a circuit configured in multiple phases. In a sensing circuit phase, the circuit configured to determine a first differential voltage between a data voltage across the bit cell and a reference voltage. In a pre-amplifying phase, the circuit is configured to pre-amplify the first differential voltage to generate a pre-amplified differential voltage, which does not have offset voltages that may arise due to process variations. In a sense amplifier phase, the circuit is configured to amplify the pre-amplified differential voltage in a latch. Generation of the pre-amplified differential voltage cancels offset voltages which may arise in the latch. In a write phase, the circuit is further configured to write a write data value to the MRAM bit cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Latch offset cancelation for magnetoresistive random access memory","description":"Systems and methods relate to operations on a magnetoresistive random access memory (MRAM) bit cell using a circuit configured in multiple phases. In a sensing circuit phase, the circuit configured to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691462","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691462","citation_suggestion":"Patentable. \"Latch offset cancelation for magnetoresistive random access memory\" (US-9691462). https://patentable.app/patents/US-9691462","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691462","json":"https://patentable.app/api/llm-context/US-9691462","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:07:58.168Z"}