{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691464","patent":{"patent_number":"US-9691464","title":"Fast programming of magnetic random access memory (MRAM)","assignee":null,"inventors":[],"filing_date":"2017-01-26T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":7,"abstract":"A method of programming an MTJ includes selecting the MTJ and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (WL), which is raised to a first voltage, Vdd, and is then allowed to float. The first voltage and a second voltage, Vx, are respectively applied to a selected bit line (BL) coupled to the selected MTJ and a selected source line (SL) coupled to the selected access transistor, thereby driving a switching current through the selected MTJ from the selected BL to SL. Alternatively, the switching current may be reversed by applying 0 V and Vdd to the selected BL and SL, respectively. Moreover, the second voltage is applied to other BLs not coupled to the selected MTJ and the first voltage is applied to other SLs not coupled to the selected access transistor, thereby boosting the voltage of the floating WL to above the first voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fast programming of magnetic random access memory (MRAM)","description":"A method of programming an MTJ includes selecting the MTJ and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (WL), which is raised ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691464","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691464","citation_suggestion":"Patentable. \"Fast programming of magnetic random access memory (MRAM)\" (US-9691464). https://patentable.app/patents/US-9691464","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691464","json":"https://patentable.app/api/llm-context/US-9691464","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:57:59.188Z"}