{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691604","patent":{"patent_number":"US-9691604","title":"LDMOS transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-07-24T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A LDMOS transistor includes a semiconductor substrate with a first doping type; a plurality of first trenches formed in the semiconductor substrate; a wave-shaped drift region with an increased conductive path and a second doping type formed on the semiconductor substrate between adjacent first trenches and the semiconductor substrate exposed by side and bottom surfaces of the first trenches; a first shallow trench isolation (STI) structure formed in each of the first trenches; a body region with the first doping type formed in semiconductor substrate at one side of the drift region; a gate structure formed over portions of the body region, the drift region and the first STI structure most close to the body region; a source region formed in the body region; and a drain region formed in the drift region at one side of the first STI structure most far away from the body region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"LDMOS transistor and fabrication method thereof","description":"A LDMOS transistor includes a semiconductor substrate with a first doping type; a plurality of first trenches formed in the semiconductor substrate; a wave-shaped drift region with an increased conduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691604","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691604","citation_suggestion":"Patentable. \"LDMOS transistor and fabrication method thereof\" (US-9691604). https://patentable.app/patents/US-9691604","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691604","json":"https://patentable.app/api/llm-context/US-9691604","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:39:23.130Z"}