{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691608","patent":{"patent_number":"US-9691608","title":"Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-04-03T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, and a first side end portion, the second main surface being opposite to the first main surface, the first side end portion connecting the first main surface and the second main surface to each other, the first main surface having a width with a maximum value of more than 100 mm. A silicon carbide epitaxial layer is formed in contact with the first side end portion, the first main surface, and a boundary between the first main surface and the first side end portion. The silicon carbide epitaxial layer formed in contact with the first side end portion and the boundary is removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device","description":"A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691608","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691608","citation_suggestion":"Patentable. \"Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device\" (US-9691608). https://patentable.app/patents/US-9691608","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691608","json":"https://patentable.app/api/llm-context/US-9691608","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:03:55.213Z"}