{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691617","patent":{"patent_number":"US-9691617","title":"IIIA-VA group semiconductor single crystal substrate and method for preparing same","assignee":null,"inventors":[],"filing_date":"2012-03-26T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: an oxygen content of 1.6×1016-5.6×1017 atoms/cm3 in a range from the surface to a depth of 10 μm of the wafer, and an electron mobility of 4,800 cm2/V·s-5,850 cm2/V·s. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a single crystal substrate (2) to be processed in a container (4); sealing said container (4), and keeping said single crystal substrate (2) to be processed at a temperature in the range of from the crystalline melting point −240° C. to the crystalline melting point −30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"IIIA-VA group semiconductor single crystal substrate and method for preparing same","description":"A IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: an oxygen content of 1.6×1016-5.6×1017 atoms/cm3 in a range from the surface to a depth ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691617","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691617","citation_suggestion":"Patentable. \"IIIA-VA group semiconductor single crystal substrate and method for preparing same\" (US-9691617). https://patentable.app/patents/US-9691617","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691617","json":"https://patentable.app/api/llm-context/US-9691617","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:03:51.241Z"}