{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691659","patent":{"patent_number":"US-9691659","title":"Via and chamfer control for advanced interconnects","assignee":null,"inventors":[],"filing_date":"2016-09-30T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of forming a semiconductor structure includes etching a via opening through an interlevel dielectric to a metal conductor. A contiguous metal liner is deposited onto exposed surfaces of the substrate. The substrate is exposed to a gaseous ion plasma to remove portions of the metal liner that are horizontally oriented and to reduce a height of the metal liner from portions thereof that are vertically oriented. Subsequently, a trench opening is formed in the interlevel dielectric, wherein the trench opening is connected with the via opening, wherein at least a portion of the metal liner remains on sidewall surfaces within the via opening during the forming of the trench opening. A diffusion barrier liner is deposited within the trench opening and the via opening. A conductive material is formed within remaining portions of the trench opening and the via opening to define the interconnect structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Via and chamfer control for advanced interconnects","description":"Methods of forming a semiconductor structure includes etching a via opening through an interlevel dielectric to a metal conductor. A contiguous metal liner is deposited onto exposed surfaces of the su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691659","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691659","citation_suggestion":"Patentable. \"Via and chamfer control for advanced interconnects\" (US-9691659). https://patentable.app/patents/US-9691659","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691659","json":"https://patentable.app/api/llm-context/US-9691659","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:34:42.613Z"}