{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691664","patent":{"patent_number":"US-9691664","title":"Dual thick EG oxide integration under aggressive SG fin pitch","assignee":null,"inventors":[],"filing_date":"2016-06-01T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method of forming a thick oxide layer over fins for EG devices and a thinner oxide layer over fins for SG devices on the same substrate and the resulting device are provided. Embodiments include forming a first set of fins over a first portion of a Si substrate; forming a second set of fins over a second portion of the Si substrate spaced from the first portion; forming an iRAD SiO2 layer over the first and second sets of fins; forming a polysilicon layer over the iRAD SiO2 layer over the first set of fins; forming a radical SiO2 layer over the iRAD SiO2 layer over the second set of fins and over the polysilicon layer; forming a mask over the radical SiO2 layer over the second set of fins; removing the polysilicon layer; and removing the mask and the iRAD SiO2 layer from the first set of fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual thick EG oxide integration under aggressive SG fin pitch","description":"A method of forming a thick oxide layer over fins for EG devices and a thinner oxide layer over fins for SG devices on the same substrate and the resulting device are provided. Embodiments include for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691664","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691664","citation_suggestion":"Patentable. \"Dual thick EG oxide integration under aggressive SG fin pitch\" (US-9691664). https://patentable.app/patents/US-9691664","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691664","json":"https://patentable.app/api/llm-context/US-9691664","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:04:03.914Z"}