{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691684","patent":{"patent_number":"US-9691684","title":"Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-07-09T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circuit device may include a semiconductor structure including a semiconductor substrate, a TSV structure passing through the semiconductor substrate, and a decoupling capacitor formed in the semiconductor substrate and connected to the TSV structure. The TSV structure and the one or more decoupling capacitors may be substantially simultaneously formed. A plurality of decoupling capacitors may be disposed within a keep out zone (KOZ) of the TSV structure. The plurality of decoupling capacitors may have the same or different widths and/or depths. An isopotential conductive layer may be formed to reduce or eliminate a potential difference between different parts of the TSV structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same","description":"An integrated circuit device is provided which includes a through-silicon via (TSV) structure and one or more decoupling capacitors, along with a method of manufacturing the same. The integrated circu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691684","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691684","citation_suggestion":"Patentable. \"Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same\" (US-9691684). https://patentable.app/patents/US-9691684","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691684","json":"https://patentable.app/api/llm-context/US-9691684","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:05:57.463Z"}