{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691733","patent":{"patent_number":"US-9691733","title":"Bonded semiconductor structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2016-07-28T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A bonded semiconductor structure includes a first substrate and a second substrate. The first substrate includes a first interconnection structure, a first dielectric layer, and a first silicon carbon nitride (SiCN) layer sequentially stacked thereon. And at least a first conductive pad is formed in the first dielectric layer and the first SiCN layer. The second substrate includes a second interconnection structure, a second dielectric layer, and a second SiCN layer sequentially stacked thereon. And at least a second conductive pad is formed in the second dielectric layer and the second SiCN layer. The first conductive pad physically contacts the second conductive pad, and the first SiCN layer physically contacts the second SiCN layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bonded semiconductor structure and method for forming the same","description":"A bonded semiconductor structure includes a first substrate and a second substrate. The first substrate includes a first interconnection structure, a first dielectric layer, and a first silicon carbon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691733","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691733","citation_suggestion":"Patentable. \"Bonded semiconductor structure and method for forming the same\" (US-9691733). https://patentable.app/patents/US-9691733","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691733","json":"https://patentable.app/api/llm-context/US-9691733","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:30.921Z"}