{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691739","patent":{"patent_number":"US-9691739","title":"Semiconductor device and method of manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-03-04T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing same","description":"In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691739","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691739","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing same\" (US-9691739). https://patentable.app/patents/US-9691739","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691739","json":"https://patentable.app/api/llm-context/US-9691739","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:40:05.922Z"}