{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691751","patent":{"patent_number":"US-9691751","title":"In-situ doped polysilicon filler for trenches","assignee":null,"inventors":[],"filing_date":"2014-12-15T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) ≧5 and a trench depth ≧10 μm. A dielectric liner is formed along the walls of the trench to form a dielectric lined trench. In-situ doped polysilicon is deposited into the trench to form a dielectric lined polysilicon filled trench having a doped polysilicon filler therein. The doped polysilicon filler after completion of fabricating the IC is essentially polysilicon void-free and has a 25° C. sheet resistance ≦100 ohms/sq. The method can include etching an opening at a bottom of the dielectric liner before depositing the polysilicon to provide ohmic contact to the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"In-situ doped polysilicon filler for trenches","description":"A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor substrate having an aspect ratio (AR) ≧5 and a trench depth ≧10 μm. A dielectric liner is formed along t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691751","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691751","citation_suggestion":"Patentable. \"In-situ doped polysilicon filler for trenches\" (US-9691751). https://patentable.app/patents/US-9691751","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691751","json":"https://patentable.app/api/llm-context/US-9691751","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:59:54.751Z"}