{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691818","patent":{"patent_number":"US-9691818","title":"Three dimensional semiconductor device having lateral channel","assignee":null,"inventors":[],"filing_date":"2015-08-28T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an active line formed on the insulating layer, including a source region, a drain region and a channel region positioned between the source region and the drain region, a gate electrode located on a portion of the active line, corresponding to a region between the source region and the drain region, and extending to a direction substantially perpendicular to the active line, and a line-shaped common source node formed to be electrically coupled to the source region and extending substantially in parallel to the gate electrode in a space between gate electrodes. The source region and the drain region of the active line are formed of a first material and the channel region of the active line is formed of a second material being different from the first material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional semiconductor device having lateral channel","description":"A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, an active line formed on the insulating layer, including ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691818","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691818","citation_suggestion":"Patentable. \"Three dimensional semiconductor device having lateral channel\" (US-9691818). https://patentable.app/patents/US-9691818","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691818","json":"https://patentable.app/api/llm-context/US-9691818","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:38:58.262Z"}