{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691855","patent":{"patent_number":"US-9691855","title":"Method of growing a high quality III-V compound layer on a silicon substrate","assignee":null,"inventors":[],"filing_date":"2012-02-17T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlxGa1-xN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of growing a high quality III-V compound layer on a silicon substrate","description":"The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691855","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691855","citation_suggestion":"Patentable. \"Method of growing a high quality III-V compound layer on a silicon substrate\" (US-9691855). https://patentable.app/patents/US-9691855","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691855","json":"https://patentable.app/api/llm-context/US-9691855","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:57:17.336Z"}