{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691878","patent":{"patent_number":"US-9691878","title":"Method of manufacturing MOSFET","assignee":null,"inventors":[],"filing_date":"2012-10-30T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Provided is a method for manufacturing a MOSFET, including: forming a shallow trench isolation (STI) in a semiconductor substrate to define an active region for the MOSFET; performing etching with the STI as a mask, to expose a surface of the semiconductor substrate, and to protrude a portion of the STI with respect to the surface of the semiconductor substrate, resulting in a protruding portion; forming a first spacer on sidewalls of the protruding portion; forming a gate stack on the semiconductor substrate; forming a second spacer surrounding the gate stack; forming openings in the semiconductor substrate with the STI, the gate stack, the first spacer and the second spacer as a mask; epitaxially growing a semiconductor layer with a bottom surface and sidewalls of each of the openings as a growth seed layer; and performing ion implantation into the semiconductor layer to form source and drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing MOSFET","description":"Provided is a method for manufacturing a MOSFET, including: forming a shallow trench isolation (STI) in a semiconductor substrate to define an active region for the MOSFET; performing etching with the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691878","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691878","citation_suggestion":"Patentable. \"Method of manufacturing MOSFET\" (US-9691878). https://patentable.app/patents/US-9691878","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691878","json":"https://patentable.app/api/llm-context/US-9691878","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:41:03.254Z"}