{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691881","patent":{"patent_number":"US-9691881","title":"Manufacturing method of thin film transistor substrate","assignee":null,"inventors":[],"filing_date":"2016-04-12T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"The invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a protective layer which is above the gate electrode and has a first recess and a second recess; wet etching the active material layer by using the protective layer as a mask to form an active layer; removing a portion of the protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of thin film transistor substrate","description":"The invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active mater","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691881","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691881","citation_suggestion":"Patentable. \"Manufacturing method of thin film transistor substrate\" (US-9691881). https://patentable.app/patents/US-9691881","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691881","json":"https://patentable.app/api/llm-context/US-9691881","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:06:09.325Z"}