{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691882","patent":{"patent_number":"US-9691882","title":"Carbon-doped cap for a raised active semiconductor region","assignee":null,"inventors":[],"filing_date":"2013-03-14T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a carbon-doped semiconductor material portion. A planarization dielectric layer is deposited over the raised active semiconductor region, and the disposable gate structure is replaced with a replacement gate structure. A contact via cavity is formed through the planarization dielectric material layer by an anisotropic etch process that employs a fluorocarbon gas as an etchant. The carbon in the carbon-doped semiconductor material portion retards the anisotropic etch process, and the carbon-doped semiconductor material portion functions as a stopping layer for the anisotropic etch process, thereby making the depth of the contact via cavity less dependent on variations on the thickness of the planarization dielectric layer or pattern factors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Carbon-doped cap for a raised active semiconductor region","description":"After formation of a disposable gate structure, a raised active semiconductor region includes a vertical stack, from bottom to top, of an electrical-dopant-doped semiconductor material portion and a c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691882","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691882","citation_suggestion":"Patentable. \"Carbon-doped cap for a raised active semiconductor region\" (US-9691882). https://patentable.app/patents/US-9691882","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691882","json":"https://patentable.app/api/llm-context/US-9691882","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:15.714Z"}