{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691885","patent":{"patent_number":"US-9691885","title":"Method for manufacturing a transistor","assignee":null,"inventors":[],"filing_date":"2016-03-10T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor substrate and the sacrificial layer. A recess is formed within the stack. The recess extends through the stack to the semiconductor substrate so that the recess at least partially overlaps with a surface of the collector region of the semiconductor substrate. The collector region extends from a main surface of the semiconductor substrate into the substrate material. The method further comprises generating a base structure at the collector region and in the recess. The base structure contacts and covers the collector region within the recess of the sacrificial layer. The method further comprises generating an emitter structure at the base structure. The emitter structure contacts and at least partially covers the base structure within the recess of the sacrificial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a transistor","description":"A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691885","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691885","citation_suggestion":"Patentable. \"Method for manufacturing a transistor\" (US-9691885). https://patentable.app/patents/US-9691885","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691885","json":"https://patentable.app/api/llm-context/US-9691885","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:53:06.708Z"}