{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691893","patent":{"patent_number":"US-9691893","title":"Low-cost semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2014-10-20T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of the substrate to form a low concentration doping region (LDD region) in the body region without a mask, forming a spacer at a side wall of the gate electrode, and implementing a high concentration ion implantation to form a high concentration source region and a high concentration drain region around the LDD region. According to the examples, devices have favorable electrical characteristics and at the same time, manufacturing costs are reduced. Since, when forming high concentration source region and drain regions, tilt and rotation co-implants are applied, an LDD masking step is potentially omitted."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low-cost semiconductor device manufacturing method","description":"Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691893","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691893","citation_suggestion":"Patentable. \"Low-cost semiconductor device manufacturing method\" (US-9691893). https://patentable.app/patents/US-9691893","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691893","json":"https://patentable.app/api/llm-context/US-9691893","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:29:08.984Z"}