{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691898","patent":{"patent_number":"US-9691898","title":"Germanium profile for channel strain","assignee":null,"inventors":[],"filing_date":"2013-12-19T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a transistor device having a strained source/drain region comprising a strained inducing material having a discontinuous germanium concentration profile. In some embodiments, the transistor device has a gate structure disposed onto a semiconductor substrate. A source/drain region having a strain inducing material is disposed along a side of the gate structure within a source/drain recess in the semiconductor substrate. The strain inducing material has a discontinuous germanium concentration profile along a line extending from a bottom surface of the source/drain recess to a top surface of the source/drain recess. The discontinuous germanium concentration profile provides improved strain boosting and dislocation propagation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Germanium profile for channel strain","description":"The present disclosure relates to a transistor device having a strained source/drain region comprising a strained inducing material having a discontinuous germanium concentration profile. In some embo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691898","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691898","citation_suggestion":"Patentable. \"Germanium profile for channel strain\" (US-9691898). https://patentable.app/patents/US-9691898","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691898","json":"https://patentable.app/api/llm-context/US-9691898","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:19.281Z"}