{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9691971","patent":{"patent_number":"US-9691971","title":"Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-06-24T00:00:00.000Z","publication_date":"2017-06-27T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"Integrated circuits that include a magnetic tunnel junction (MTJ) for a magnetoresistive random-access memory (MRAM) and methods for fabricating such integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming a lower electrode on a metal interconnect. The metal interconnect is disposed above a semiconductor substrate and is aligned with a normal axis that is substantially perpendicular to the semiconductor substrate. The lower electrode includes a conductive metal plug. A MTJ stack is formed on the lower electrode aligned with the normal axis."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same","description":"Integrated circuits that include a magnetic tunnel junction (MTJ) for a magnetoresistive random-access memory (MRAM) and methods for fabricating such integrated circuits are provided. In one example, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9691971","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9691971","citation_suggestion":"Patentable. \"Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same\" (US-9691971). https://patentable.app/patents/US-9691971","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9691971","json":"https://patentable.app/api/llm-context/US-9691971","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:41:19.670Z"}