{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9695503","patent":{"patent_number":"US-9695503","title":"High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer","assignee":null,"inventors":[],"filing_date":"2015-08-06T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cm2 and 10 W/cm2 and a pulse width which is less than 100 μs and greater than 30 μs, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer","description":"Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9695503","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9695503","citation_suggestion":"Patentable. \"High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer\" (US-9695503). https://patentable.app/patents/US-9695503","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9695503","json":"https://patentable.app/api/llm-context/US-9695503","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:51:22.697Z"}