{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9697874","patent":{"patent_number":"US-9697874","title":"Monolithic memory comprising 1T1R code memory and 1TnR storage class memory","assignee":null,"inventors":[],"filing_date":"2016-06-09T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":40,"abstract":"Providing for a monolithic memory device comprising a combination of a one-transistor, one-resistor (1T1R) memory array, and a one-transistor, multiple-resistor (1TnR, where n is a suitable integer greater than 1) memory array is described herein. By way of example, the monolithic memory device can be a stand-alone device, configured to perform functions in response to predetermined conditions and generate an output(s), or can be a removable device that can be connected to and operable with another device. In various embodiments, the 1TnR array having high memory density can serve as storage class memory (SCM) for the monolithic memory device, and the 1T1R array having high performance and efficacy can serve as code memory. In addition to the foregoing, the 1T1R array and the 1TnR array can be fabricated from at least one common layer or a common processing step, to simplify and lower cost of fabricating disclosed memory devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Monolithic memory comprising 1T1R code memory and 1TnR storage class memory","description":"Providing for a monolithic memory device comprising a combination of a one-transistor, one-resistor (1T1R) memory array, and a one-transistor, multiple-resistor (1TnR, where n is a suitable integer gr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9697874","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9697874","citation_suggestion":"Patentable. \"Monolithic memory comprising 1T1R code memory and 1TnR storage class memory\" (US-9697874). https://patentable.app/patents/US-9697874","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9697874","json":"https://patentable.app/api/llm-context/US-9697874","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:34.053Z"}