{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9697882","patent":{"patent_number":"US-9697882","title":"Analog ferroelectric memory with improved temperature range","assignee":null,"inventors":[],"filing_date":"2016-08-30T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Qmax. A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Qmax for the ferroelectric capacitor, determines a charge that is a fraction of the measured Qmax to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Qmax to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Qmax for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Qmax."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Analog ferroelectric memory with improved temperature range","description":"A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9697882","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9697882","citation_suggestion":"Patentable. \"Analog ferroelectric memory with improved temperature range\" (US-9697882). https://patentable.app/patents/US-9697882","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9697882","json":"https://patentable.app/api/llm-context/US-9697882","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:57:56.926Z"}