{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9697990","patent":{"patent_number":"US-9697990","title":"Etching method for a structure pattern layer having a first material and second material","assignee":null,"inventors":[],"filing_date":"2016-11-15T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"Provided is a method of plasma etching on a substrate using an etchant gas mixture to meet integration objectives, the method comprising: disposing a substrate having a structure pattern layer, a neutral layer, and an underlying layer, the structure pattern layer comprising a first material and a second material and the underlying layer comprising a silicon anti-reflective (SiARC) layer, a spin-on carbon hardmask (CHM) layer, an oxide layer, and a target layer; performing an first etch process to selectively remove the second material and the neutral layer using a first etchant gas mixture to form a first pattern; performing an second etch process to selectively remove the SiARC layer to form a second pattern; performing an third etch process to selectively remove the CHM layer to form a third pattern; concurrently controlling selected two or more operating variables wherein the first etchant gas include oxygen and sulfur-containing gases."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etching method for a structure pattern layer having a first material and second material","description":"Provided is a method of plasma etching on a substrate using an etchant gas mixture to meet integration objectives, the method comprising: disposing a substrate having a structure pattern layer, a neut","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9697990","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9697990","citation_suggestion":"Patentable. \"Etching method for a structure pattern layer having a first material and second material\" (US-9697990). https://patentable.app/patents/US-9697990","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9697990","json":"https://patentable.app/api/llm-context/US-9697990","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:45:02.618Z"}