{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698016","patent":{"patent_number":"US-9698016","title":"Cut first self-aligned litho-etch patterning","assignee":null,"inventors":[],"filing_date":"2016-07-06T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a method for performing a self-aligned litho-etch (SALE) process. In some embodiments, the method is performed by forming a first cut layer over a hard mask having a first layer and an underlying second layer. A first plurality of openings are formed within the first layer and expose the second layer at a first plurality of positions. Two or more of the first plurality of openings are separated by the first cut layer. A spacer material is selectively formed onto sidewalls of the first plurality of openings within the first layer. A second plurality of openings are then formed within the first layer. The second plurality of openings are separated by a second cut layer including the spacer material and expose the second layer at a second plurality of positions. The second layer is etched according to the first layer and the spacer material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cut first self-aligned litho-etch patterning","description":"The present disclosure relates to a method for performing a self-aligned litho-etch (SALE) process. In some embodiments, the method is performed by forming a first cut layer over a hard mask having a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698016","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698016","citation_suggestion":"Patentable. \"Cut first self-aligned litho-etch patterning\" (US-9698016). https://patentable.app/patents/US-9698016","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698016","json":"https://patentable.app/api/llm-context/US-9698016","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:54:37.055Z"}