{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698024","patent":{"patent_number":"US-9698024","title":"Partial SOI on power device for breakdown voltage improvement","assignee":null,"inventors":[],"filing_date":"2014-07-14T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer, a handle wafer, and an intermediate oxide layer. A recess is formed in a lower surface of the handle wafer to define a recessed region of the handle wafer. The recessed region of the handle wafer has a first handle wafer thickness, which is greater than zero. An un-recessed region of the handle wafer has a second handle wafer thickness, which is greater than the first handle wafer thickness. The first handle wafer thickness of the recessed region provides a breakdown voltage improvement for the power device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Partial SOI on power device for breakdown voltage improvement","description":"Some embodiments of the present disclosure relate to a method to increase breakdown voltage of a power device. A power device is formed on a silicon-on-insulator (SOI) wafer made up of a device wafer,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698024","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698024","citation_suggestion":"Patentable. \"Partial SOI on power device for breakdown voltage improvement\" (US-9698024). https://patentable.app/patents/US-9698024","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698024","json":"https://patentable.app/api/llm-context/US-9698024","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:44:05.319Z"}