{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698046","patent":{"patent_number":"US-9698046","title":"Fabrication of III-V-on-insulator platforms for semiconductor devices","assignee":null,"inventors":[],"filing_date":"2015-01-07T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to one embodiment, compositionally-graded buffer layers of III-V alloy are grown on a silicon substrate, and a smart cut technique is used to cut and transfer one or more layers of III-V alloy to a silicon wafer having an insulator layer such as an oxide. One or more transferred layers of III-V alloy can be etched away to expose a desired transferred layer of III-V alloy, upon which a semi-insulating buffer layer and channel layer can be grown to yield IIIVOI platform on which semiconductor devices (e.g., planar and/or 3-dimensional FETs) can be fabricated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication of III-V-on-insulator platforms for semiconductor devices","description":"Embodiments of the present invention provide III-V-on-insulator (IIIVOI) platforms for semiconductor devices and methods for fabricating the same. According to one embodiment, compositionally-graded b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698046","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698046","citation_suggestion":"Patentable. \"Fabrication of III-V-on-insulator platforms for semiconductor devices\" (US-9698046). https://patentable.app/patents/US-9698046","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698046","json":"https://patentable.app/api/llm-context/US-9698046","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:51:19.274Z"}