{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698049","patent":{"patent_number":"US-9698049","title":"Nonvolatile memory device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-12-27T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A nonvolatile memory device may include a stair-shaped structure including a first interlayer dielectric layer and a memory cell repeatedly stacked. The nonvolatile memory device may include an etch stop layer and a second interlayer dielectric layer formed over the stair-shaped structure. The nonvolatile memory device may include an isolation layer passing through the stair-shaped structure, the etch stop layer, and the second interlayer dielectric layer. The nonvolatile memory device may include protective layer interposed between the isolation layer and the etch stop layer, and the protective layer interposed between the isolation layer and the second interlayer dielectric layer. The nonvolatile memory device may include contact plugs coupled to each memory cell, respectively, by passing through the second interlayer dielectric layer and the etch stop layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device and method for fabricating the same","description":"A nonvolatile memory device may include a stair-shaped structure including a first interlayer dielectric layer and a memory cell repeatedly stacked. The nonvolatile memory device may include an etch s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698049","citation_suggestion":"Patentable. \"Nonvolatile memory device and method for fabricating the same\" (US-9698049). https://patentable.app/patents/US-9698049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698049","json":"https://patentable.app/api/llm-context/US-9698049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:57:55.265Z"}