{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698050","patent":{"patent_number":"US-9698050","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-07-29T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wiring insulating film insulating between the plurality of copper-containing films, and a void formed between the plurality of copper-containing films, and a first diffusion barrier film formed on a portion of an upper surface of the copper-containing films to suppress diffusion of a component of the copper-containing films, and forming a second diffusion barrier film configured to suppress diffusion of a component of the copper-containing films on a surface of another portion, on which the first diffusion barrier film is not formed, in the copper-containing films."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device includes loading, into a process chamber, a substrate including a first wiring layer having a first interlayer insulating film, a plurality of copper-c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698050","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698050","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9698050). https://patentable.app/patents/US-9698050","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698050","json":"https://patentable.app/api/llm-context/US-9698050","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:51:20.709Z"}