{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698051","patent":{"patent_number":"US-9698051","title":"Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages","assignee":null,"inventors":[],"filing_date":"2015-01-06T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages","description":"A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698051","citation_suggestion":"Patentable. \"Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages\" (US-9698051). https://patentable.app/patents/US-9698051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698051","json":"https://patentable.app/api/llm-context/US-9698051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:06:36.963Z"}