{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698058","patent":{"patent_number":"US-9698058","title":"Structure and method for FinFET device","assignee":null,"inventors":[],"filing_date":"2015-10-27T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrate in the first gate region. The first fin structure includes an upper semiconductor material member, a lower semiconductor material member, surrounded by an oxide feature and a liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member. The device also includes a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member. Therefore the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for FinFET device","description":"The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698058","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698058","citation_suggestion":"Patentable. \"Structure and method for FinFET device\" (US-9698058). https://patentable.app/patents/US-9698058","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698058","json":"https://patentable.app/api/llm-context/US-9698058","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:54:39.743Z"}