{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698060","patent":{"patent_number":"US-9698060","title":"Germanium FinFETs with metal gates and stressors","assignee":null,"inventors":[],"filing_date":"2016-01-25T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Germanium FinFETs with metal gates and stressors","description":"An integrated circuit structure includes an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698060","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698060","citation_suggestion":"Patentable. \"Germanium FinFETs with metal gates and stressors\" (US-9698060). https://patentable.app/patents/US-9698060","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698060","json":"https://patentable.app/api/llm-context/US-9698060","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:02:07.050Z"}