{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698061","patent":{"patent_number":"US-9698061","title":"Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes","assignee":null,"inventors":[],"filing_date":"2016-05-18T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of forming a polysilicon resistor in replacement metal gate (RMG) processing of finFET devices includes forming a plurality of semiconductor fins over a buried oxide layer of a silicon-on-insulator substrate; forming a trench in the buried oxide layer; forming a polysilicon layer over the semiconductor fins and in the trench, the polysilicon layer having a depression corresponding to a location of the trench; forming an insulating layer over the polysilicon layer, and performing a planarizing operation to remove the insulating layer except for a portion of the insulating layer formed in the depression, thereby defining a protective island; patterning the polysilicon layer to define both a dummy gate structure over the fins and the polysilicon resistor; and etching the polysilicon layer to remove the dummy gate structure, wherein the protective island prevents the polysilicon resistor from being removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes","description":"A method of forming a polysilicon resistor in replacement metal gate (RMG) processing of finFET devices includes forming a plurality of semiconductor fins over a buried oxide layer of a silicon-on-ins","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698061","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698061","citation_suggestion":"Patentable. \"Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes\" (US-9698061). https://patentable.app/patents/US-9698061","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698061","json":"https://patentable.app/api/llm-context/US-9698061","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:44:59.096Z"}