{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698063","patent":{"patent_number":"US-9698063","title":"Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure","assignee":null,"inventors":[],"filing_date":"2013-02-18T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"The invention concerns a method of testing a semiconductor-on-insulator type structure comprising a support substrate, a dielectric layer having a thickness of less than 50 nm and a semiconductor layer, the structure comprising a bonding interface between the dielectric layer and the support substrate or the semiconductor layer or inside the dielectric layer, characterized in that it comprises measuring the charge to breakdown (QBD) of the dielectric layer and in that information is deduced from the measurement relating to the hydrogen concentration in the layer and/or at the bonding interface. The invention also concerns a method of fabricating a batch of semiconductor-on-insulator type structures including carrying out the test on a sample structure from the batch."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure","description":"The invention concerns a method of testing a semiconductor-on-insulator type structure comprising a support substrate, a dielectric layer having a thickness of less than 50 nm and a semiconductor laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698063","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698063","citation_suggestion":"Patentable. \"Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure\" (US-9698063). https://patentable.app/patents/US-9698063","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698063","json":"https://patentable.app/api/llm-context/US-9698063","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:36:57.475Z"}