{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698103","patent":{"patent_number":"US-9698103","title":"Semiconductor device and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2015-11-20T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A semiconductor device comprises a conductive layer, a first insulating film, a barrier metal, a contact electrode, and a surface electrode. The first insulating film is located on the conductive layer and comprises a contact hole reaching the conductive layer. At least a surface part of the first insulating film is a BPSG film. The barrier metal covers an inner surface of the contact hole. The contact electrode is located in the contact hole and on the barrier metal. The surface electrode is located on the BPSG film and the contact electrode. The barrier metal is not interposed between the BPSG film and the surface electrode so that the surface electrode is directly in contact with the BPSG film. At least a part of the surface electrode is a bonding pad."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method therefor","description":"A semiconductor device comprises a conductive layer, a first insulating film, a barrier metal, a contact electrode, and a surface electrode. The first insulating film is located on the conductive laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698103","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698103","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method therefor\" (US-9698103). https://patentable.app/patents/US-9698103","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698103","json":"https://patentable.app/api/llm-context/US-9698103","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:54:28.202Z"}