{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698147","patent":{"patent_number":"US-9698147","title":"Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors","assignee":null,"inventors":[],"filing_date":"2016-02-23T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"A semiconductor integrated circuit device has a first N-channel type high withstanding-voltage MOS transistor and a second N-channel type high withstanding-voltage MOS transistor formed on an N-type semiconductor substrate. The first N-channel type high withstanding-voltage transistor includes a third N-type low-concentration impurity region containing arsenic having a depth smaller than a P-type well region in a drain region within the P-type well region, and the second N-channel type high withstanding-voltage MOS transistor includes a fourth N-type low-concentration impurity region that is adjacent to the P-type well region and has a bottom surface in contact with the N-type semiconductor substrate. In this manner, the high withstanding-voltage NMOS transistors are capable of operating at 30 V or higher and are integrated on the N-type semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors","description":"A semiconductor integrated circuit device has a first N-channel type high withstanding-voltage MOS transistor and a second N-channel type high withstanding-voltage MOS transistor formed on an N-type s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698147","citation_suggestion":"Patentable. \"Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors\" (US-9698147). https://patentable.app/patents/US-9698147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698147","json":"https://patentable.app/api/llm-context/US-9698147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:02:11.158Z"}