{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698152","patent":{"patent_number":"US-9698152","title":"Three-dimensional memory structure with multi-component contact via structure and method of making thereof","assignee":null,"inventors":[],"filing_date":"2015-10-29T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A contact via structure can include a ruthenium portion formed by selective deposition of ruthenium on a semiconductor surface at the bottom of a contact trench. The ruthenium-containing portion can reduce contact resistance at the interface with an underlying doped semiconductor region. At least one conductive material portion can be formed in the remaining volume of the contact trench to form a contact via structure. Alternatively or additionally, a contact via structure can include a tensile stress-generating portion and a conductive material portion. In case the contact via structure is formed through an alternating stack of insulating layers and electrically conductive layers that include a compressive stress-generating material, the tensile stress-generating portion can at least partially cancel the compressive stress generated by the electrically conductive layers. The conductive material portion of the contact via structure can include a metallic material or a doped semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory structure with multi-component contact via structure and method of making thereof","description":"A contact via structure can include a ruthenium portion formed by selective deposition of ruthenium on a semiconductor surface at the bottom of a contact trench. The ruthenium-containing portion can r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698152","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698152","citation_suggestion":"Patentable. \"Three-dimensional memory structure with multi-component contact via structure and method of making thereof\" (US-9698152). https://patentable.app/patents/US-9698152","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698152","json":"https://patentable.app/api/llm-context/US-9698152","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:02:08.156Z"}