{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698153","patent":{"patent_number":"US-9698153","title":"Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad","assignee":null,"inventors":[],"filing_date":"2016-03-24T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"Alignment between memory openings through multiple tier structures can be facilitated employing a temporary landing pad. The temporary landing pad can have a greater area than the horizontal cross-sectional area of a first memory opening through a first tier structure including a first alternating stack of first insulating layers and first spacer material layers. An upper portion of a first memory film is removed, and a sidewall of an insulating cap layer that defines the first memory opening can be laterally recessed to form a recessed cavity. A sacrificial fill material is deposited in the recessed cavity to form a sacrificial fill material portion, which functions as the temporary landing pad for a second memory opening that is subsequently formed through a second tier structure including second insulating layers and second spacer material layers. A memory stack structure can be formed through the first and second tier structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad","description":"Alignment between memory openings through multiple tier structures can be facilitated employing a temporary landing pad. The temporary landing pad can have a greater area than the horizontal cross-sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698153","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698153","citation_suggestion":"Patentable. \"Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad\" (US-9698153). https://patentable.app/patents/US-9698153","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698153","json":"https://patentable.app/api/llm-context/US-9698153","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:37:50.578Z"}