{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9698202","patent":{"patent_number":"US-9698202","title":"Parallel bit line three-dimensional resistive random access memory","assignee":null,"inventors":[],"filing_date":"2015-03-02T00:00:00.000Z","publication_date":"2017-07-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":44,"abstract":"Resistive random access memory (ReRAM) array includes line stack structures located over a substrate. The line stack structures are laterally spaced apart along a first horizontal direction, and extend along a second horizontal direction that is different from the first horizontal direction. Each line stack structure comprises an alternating plurality of word lines and bit lines. An intervening line stack including a memory material line structure, an intrinsic semiconductor material line structure, and a doped semiconductor material line structure is located between each vertically neighboring pair of a word line and a bit line within the alternating plurality of word lines and bit lines. A two-dimensional array of vertical selector lines functions as gate electrodes that activates a semiconductor channel between a word line and a bit line. Resistance of the memory material line structure contacting the activated semiconductor channel can be programmed and/or measured within the ReRAM array."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Parallel bit line three-dimensional resistive random access memory","description":"Resistive random access memory (ReRAM) array includes line stack structures located over a substrate. The line stack structures are laterally spaced apart along a first horizontal direction, and exten","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9698202","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9698202","citation_suggestion":"Patentable. \"Parallel bit line three-dimensional resistive random access memory\" (US-9698202). https://patentable.app/patents/US-9698202","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9698202","json":"https://patentable.app/api/llm-context/US-9698202","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:37:43.398Z"}